Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

IEEE Photonics Journal

卷:13

Amit Yadav¹  Edik Rafailov¹  Thomas Slight²  Kevin E Doherty³  Mohsin Haji⁴  Martin Knapp⁴  Anthony E Kelly⁵  Pavlo Ivanov⁵  Steffan Gwyn⁵  Weikang Zhang⁵  Shaun Viola⁵  Scott Watson⁵  Stephen P Najda⁶  Mike Leszczyski⁶  Szymon Grzanka⁶  Szymon Stanczyk⁶  Piotr Perlin⁶ 

[1] Aston University, Birmingham, U.K.;

[2] Compound Semiconductor Technologies Global Ltd., Glasgow, U.K.;

[3] Kelvin Nanotechnology, Glasgow, U.K.;

[4] National Physical Laboratory, Teddington, U.K.;

[5] School of Engineering, University of Glasgow, Glasgow, U.K.;

[6] TopGaN Lasers, Warsaw, Poland;

关键词: Gallium Nitride;    distributed feedback laser diode;    optical communications;   

DOI  :  10.1109/JPHOT.2020.3045218

来源: DOAJ

【 摘 要 】

We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3^rd-order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

【 授权许可】

Unknown