Límites impuestos por los elementos pasivos en el diseño de amplificadores de bajo ruido en tecnología CMOS

Ingeniería Electrónica, Automática y Comunicaciones

Luiz Moreno, Robson¹  Vázquez, Diego¹  González Ríos, Jorge Luís¹ 

关键词: low-noise amplifier (LNA);    CMOS;    integrated circuit;    low power;    passive elements;    radio frequency.;   

DOI  :  

来源: Instituto Superior Politecnico "Jose Antonio Echeverria"

【 摘 要 】

This paper analyses the impact of technological limits of passive elements on integrated CMOS Low-Noise Amplifiers (LNAs) design. The topology under study is the commonly used inductively degenerated common-source LNA. An equation-based analysis is presented, which is verified and complemented by means of simulation. Simulations were carried out using a 130-nm 1.2-V CMOS technology, working at 2.4 GHz. We obtained that inductance and capacitance values available in the technological process constraint the achievable maximum gain, minimum power consumption and transistor sizing. Results also show that designers must include as much information as possible about passive elements into the design procedure of radiofrequency integrated circuits.

【 授权许可】

Unknown