Análisis de robustez ante variaciones de proceso en amplificadores CMOS integrados de bajo ruido

Ingeniería Electrónica, Automática y Comunicaciones

Cruz Hurtado, Juan C.²  Moreno, Robson L.¹  González Ríos, Jorge L.²  Vázquez, Diego³ 

[1] Universidade Federal de Itajubá (UNIFEI), Itajubá, Brasil;Centro de Investigaciones en Microelectrónica (CIME-CUJAE), La Habana, Cuba;Instituto de Microelectrónica de Sevilla (IMSE-CNM-CSIC), Sevilla, España

关键词: low-noise amplifier (LNA);    integrated circuit;    CMOS;    process and mismatch variations;    low power;    radiofrequency (RF).;   

DOI  :  

来源: Instituto Superior Politecnico "Jose Antonio Echeverria"

【 摘 要 】

This work analyzes the statistical behavior under process and mismatch variations of various 130-nm/1.2-V CMOS low-noise amplifiers (LNAs). The effects of LNAs’ parameters degradation on receiver’s performance are also analyzed. Amplifiers using different channel-length transistors and biasing-current values are studied. Monte Carlo simulations show that using longer-channel transistors and increasing power consumption enhance receiver’s yield. Gain drop arises as the LNA parameter with highest impact on receiver failure. These results confirm the necessity of including variability analysis into conventional design methodologies, in order to trade power consumption and production cost.

【 授权许可】

Unknown