Understanding the effect of $n$-type and $p$-type doping in the channel of graphene nanoribbon transistor

Bulletin of materials science

VIKRAM SINGH¹  SUDHANSHU CHOUDHARY¹ 

[1] School of VLSI Design and Embedded Systems, NIT Kurukshetra, Kurukshetra 136 119, India$$School of VLSI Design and Embedded Systems, NIT Kurukshetra, Kurukshetra 136 119, IndiaSchool of VLSI Design and Embedded Systems, NIT Kurukshetra, Kurukshetra 136 119, India$$

关键词: Doping;    graphene;    field-effect transistor;    graphene nanoribbon.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In this paper, device performance of graphene nanoribbon field effect transistor (GNRFET) with different doping concentrations in different parts of the channel is reported. The study is performed by using atomistic simulations based on self-consistent solution of Schrodinger’s and Poisson’s equation within the non-equilibrium Green’s function formalism. The transfer and output characteristics suggest that device performance with $n$-type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the $n$-type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and $p$-type doped channel GNRFET. Further, we introduced step-doping profile in the graphene nanoribbon (GNR) channel and found that the device gives better on-current and good saturation condition when compared to undoped or uniformly-doped channel.

【 授权许可】

Unknown