FIELD-EFFECT TRANSISTOR BASED ON GRAPHENE â€" POROUS SILICON HYBRID STRUCTURE

Journal of physical studies

article

I. B. Olenych¹  Ya. V. Boyko¹ 

[1] Ivan Franko National University of Lviv

关键词: field-effect transistor;    graphene;    porous silicon;    hybrid structure;    current-voltage characteristics;    impedance.;   

DOI  :  10.30970/jps.27.1701

学科分类：物理（综合）

来源: Vydavnychyi Tsentr L vivs koho Natsional noho Universytetu imeni Ivana Franka

【 摘 要 】

In this study, reduced graphene oxide (rGO) – porous silicon (PS) hybrid structures are suggested to create a field-effect transistor (FET). The electrical properties and switching characteristics of the obtained rGO-PS-based FET were studied in both DC and AC modes. A significant influence of the supporting PS layer on the transport of charge carriers in the graphene film was established. A decrease in resistance and an increase in the capacity of the graphene FET channel due to photogenerated charge carriers in the porous layer were found. Based on the impedance spectra, the parameters of the equivalent circuit model of the rGO-PS-based FET for different gate voltages are determined.

【 授权许可】

CC BY