Structural modification of tantalum crystal induced by nitrogen ion implantation

Bulletin of materials science

E DARABI¹  A H RAMEZANI¹  M GHORANNEVISS¹  M R HANTEHZADEH¹ 

[1] Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran 16315-835, Iran$$Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran 16315-835, IranPlasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran 16315-835, Iran$$

关键词: Ion implantation;    nitrogen;    tantalum;    XRD;    AFM.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

This paper investigates the effect of nitrogen ion implantation on tantalum surface structure. In this experiment, nitrogen ions which had an energy of 30 keV and doses of $1 imes 10^{17}$ to $10 imes 10^{17}$ ions cm$^{�?2}$ were used. X-ray diffraction analysis (XRD) was applied for both the metallic Ta substrate and the study of new structures that have been created through the nitrogen ion implantation. Atomic force microscopy (AFM) was also used tocheck the roughness variations prior to and also after the implantation phase. The experimental results show the formation of hexagonal tantalum nitride (TaN$_{0.43}$) in addition to the fact that by increasing the ion dose, the nitrogen atoms occupy more interstitial spaces in the target crystal. The nitride phase also seen for $3imes 10^{17}$ and $5imes 10^{17}$ ions cm$^{�?2}$, while it disappeared for higher dose of $7imes 10^{17}$ and $1imes 10^{18}$ions cm$^{�?2}$. The FWHM of the dominant peak of tantalum nitride suggest the growth of the crystallite’s size, which is in agreement with the AFM results ofthe grains.

【 授权许可】

Unknown