Bulletin of materials science | |
ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode | |
Hatice Kanbur ÇavuÅŸ1  Sefa B K Aydin1  Dilber E Yildiz2  Recep Åžahingöz1  | |
[1] Department of Physics, Faculty of Arts and Sciences, Bozok University, Yozgat 66100, Turkey$$Department of Physics, Faculty of Arts and Sciences, Bozok University, Yozgat 66100, TurkeyDepartment of Physics, Faculty of Arts and Sciences, Bozok University, Yozgat 66100, Turkey$$;Department of Physics, Faculty of Arts and Sciences, Hitit University, Çorum 19030, Turkey$$Department of Physics, Faculty of Arts and Sciences, Hitit University, Çorum 19030, TurkeyDepartment of Physics, Faculty of Arts and Sciences, Hitit University, Çorum 19030, Turkey$$ | |
关键词: ALD TiO2; electrical properties; interface state density; Schottky effect; Pooleâ€�?�Frenkel emission.; | |
DOI : | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias currentâ€�?�voltage (ð¼â€�?�ð�?��??) characteristics of diode were studied. Using thermionic emission (TE) theory, the main electrical parameters of the Al/TiO2/p-Si Schottky diode such as ideality factor (ð‘�??), zero bias barrier height (ðœ�?Bo) and series resistance (ð‘�??s) were estimated from forward bias ð¼â€�?�ð�?��?? plots. At the same time, values of ð‘�??, ðœ�?Bo and ð‘�??s were obtained from Cheung’s method. It was shown that electrical parameters obtained from TE theory and Cheung’s method exhibit close agreement with each other. The reverse-bias leakage current mechanism of Al/TiO2/p-Si Schottky barrier diodes was investigated. The ð¼â€�?�ð�?��?? curves in the reverse direction are taken and interpreted via both Schottky and Pooleâ€�?�Frenkel effects. Schottky effect was found to be dominant in the reverse direction. In addition, the capacitanceâ€�?�voltage (ð¶â€�?�ð�?��??) and conductanceâ€�?�voltage (ðº/ð‘¤â€“ð�?��??) characteristics of diode were investigated at different frequencies (50â€�??500 kHz). The frequency dependence of interface states density was obtained from the Hillâ€�?�Coleman method and the voltage dependence of interface states density was obtained from the highâ€�?�low frequency capacitance method.
【 授权许可】
Unknown
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