ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

Bulletin of materials science

Hatice Kanbur ÇavuÅŸ¹  Sefa B K Aydin¹  Dilber E Yildiz²  Recep Åžahingöz¹ 

[1] Department of Physics, Faculty of Arts and Sciences, Bozok University, Yozgat 66100, Turkey$$Department of Physics, Faculty of Arts and Sciences, Bozok University, Yozgat 66100, TurkeyDepartment of Physics, Faculty of Arts and Sciences, Bozok University, Yozgat 66100, Turkey$$;Department of Physics, Faculty of Arts and Sciences, Hitit University, Çorum 19030, Turkey$$Department of Physics, Faculty of Arts and Sciences, Hitit University, Çorum 19030, TurkeyDepartment of Physics, Faculty of Arts and Sciences, Hitit University, Çorum 19030, Turkey$$

关键词: ALD TiO2;    electrical properties;    interface state density;    Schottky effect;    Pooleâ€�?�Frenkel emission.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO₂) thin film was performed at room temperature. The forward and reverse bias currentâ€�?�voltage (𝐼â€�?�ð�?��??) characteristics of diode were studied. Using thermionic emission (TE) theory, the main electrical parameters of the Al/TiO₂/p-Si Schottky diode such as ideality factor (ð‘�??), zero bias barrier height (ðœ�?_Bo) and series resistance (ð‘�??_s) were estimated from forward bias 𝐼â€�?�ð�?��?? plots. At the same time, values of ð‘�??, ðœ�?_Bo and ð‘�??_s were obtained from Cheung’s method. It was shown that electrical parameters obtained from TE theory and Cheung’s method exhibit close agreement with each other. The reverse-bias leakage current mechanism of Al/TiO₂/p-Si Schottky barrier diodes was investigated. The 𝐼â€�?�ð�?��?? curves in the reverse direction are taken and interpreted via both Schottky and Pooleâ€�?�Frenkel effects. Schottky effect was found to be dominant in the reverse direction. In addition, the capacitanceâ€�?�voltage (𝐶â€�?�ð�?��??) and conductanceâ€�?�voltage (𝐺/𝑤–ð�?��??) characteristics of diode were investigated at different frequencies (50â€�??500 kHz). The frequency dependence of interface states density was obtained from the Hillâ€�?�Coleman method and the voltage dependence of interface states density was obtained from the highâ€�?�low frequency capacitance method.

【 授权许可】

Unknown