Oxidation of ZnO thin films during pulsed laser deposition process

Bulletin of materials science

T Flores¹  J G Lunney²  L V Ponce¹  L Moreira¹  J Pérez De La Cruz³  E De Posada¹  M Arronte¹ 

[1] CICATA-Instituto Politécnico Nacional, Altamira 89600, México$$CICATA-Instituto Politécnico Nacional, Altamira 89600, MéxicoCICATA-Instituto Politécnico Nacional, Altamira 89600, México$$;School of Physics, Trinity College, Dublin 2, Ireland$$School of Physics, Trinity College, Dublin 2, IrelandSchool of Physics, Trinity College, Dublin 2, Ireland$$;INESC Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal$$INESC Porto, Rua do Campo Alegre, 687, 4169-007 Porto, PortugalINESC Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal$$

关键词: Ablation;    film deposition;    ZnO thin film;    semiconductors.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Pulsed laser deposition of ZnO thin films, using KrF laser, is analysed. The films were deposited on (001) sapphire substrates at 400 °C, at two different oxygen pressures (0.3 and 0.4 mbar) and two different target�?�substrate distances (30 and 40 mm). It is observed that in order to obtain good quality in the photoluminescence of the films, associated with oxygen stoichiometry, it is needed to maximize the time during which the plasma remains in contact with the growing film (plasma residence time), which is achieved by selecting suitable combinations of oxygen pressures and target to substrate distances. It is also discussed that for the growth parameters used, the higher probability for ZnO films growth results from the oxidation of Zn deposited on the substrate and such process takes place during the time that the plasma is in contact with the substrate. Moreover, it is observed that maximizing the plasma residence time over the growing film reduces the rate of material deposition, favouring the surface diffusion of adatoms, which favours both Zn�?�O reaction and grain growth.

【 授权许可】

Unknown