p-ZnO Thin Films Deposited by RF-Magnetron Sputtering

15th Latin American Workshop on Plasma Physics; 21st IAEA TM on Research Using Small Fusion Devices

Zambom, L.S.^1 ; Mansano, R.D.^2

DSE, Faculdade de Tecnologia de São Paulo, CEETEPS, Brazil^1

DEE-PSI-LSI-Escola Politecnica, Universidade de São Paulo, Brazil^2

关键词: Exposed to;    High resistivity;    Photoconduction;    rf-Magnetron sputtering;    Semiconductor applications;    Silicon substrates;    White light;    ZnO thin film;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/591/1/012040/pdf
DOI  :  10.1088/1742-6596/591/1/012040

来源: IOP

【 摘 要 】

In this work, we study ZnO thin films deposited onto silicon substrate by RF-magnetron sputtering for semiconductor applications. For this, we analyses resistivity, photoconduction, composition and semiconducting characteristics, in these films. The results indicate that the films are nearly stoichiometric, p-type, with relative high resistivity and some samples shown photocurrent when exposed to white light.