Proton Radiation Damage in High-Resistivity n-type Silicon CCDs.

Bebek, C. J. ; Groom, D. E. ; Holland, S. E. ; Karcher, A. ; Kolbe, W. F. ; Lee, J. ; Levi, M. E.

Technical Information Center Oak Ridge Tennessee

关键词: Efficiency;    Protons;    Pumping;    High resistivity;    Radiation doses;   

RP-ID  :  DE2004826087

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.