Sol�?�gel deposited ceria thin films as gate dielectric for CMOS technology

Bulletin of materials science

Anil G Khairnar¹  Ashok M Mahajan¹ 

[1] Department of Electronics, North Maharashtra University, Jalgaon, 425 001, India$$Department of Electronics, North Maharashtra University, Jalgaon, 425 001, IndiaDepartment of Electronics, North Maharashtra University, Jalgaon, 425 001, India$$

关键词: High-𝑘;    CeO2;    gate dielectric;    solâ€�?�gel;    FTIR;    XRD;    CV.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by solâ€�?�gel spin-coating technique and further characterized to study the various properties. Chemical composition of deposited films has been analysed by FTIR which shows existence of CeO₂. The samples have been optically characterized using ellipsometry to find refractive index of 2.18 and physical thickness which is measured to be 5.56 nm. MOS capacitors were fabricated by depositing aluminum (Al) metal using the thermal evaporation technique on the top of CeO₂ thin films. Capacitanceâ€�?�voltage measurement was carried out to calculate the dielectric constant, flat-band voltage shift of 18.92, 0.3â€�??0.5V, respectively and conductanceâ€�?�voltage study was carried out to determine the Dit of 1.40 Ã�? 10¹³ eV^-1 cm^-2 at 1MHz.

【 授权许可】

Unknown