Localization of Implanted Impurities in Silicon | Science Publications

American Journal of Applied Sciences

Jihad S.M. Addasi¹  M. Jadan¹ 

关键词: Localization;    silicon;    impurities;   

DOI  :  10.3844/ajassp.2005.857.859

学科分类：自然科学（综合）

来源: Science Publications

【 摘 要 】

Localization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial.

【 授权许可】

Unknown