Effects of the Dielectric Environment on the Electrical Properties of Graphene

graphene;dielectric;mathematical modelling;field-effect transistors;impurities;Applied Mathematics

Anicic, Rastko

University of Waterloo

关键词: graphene;    dielectric;    mathematical modelling;    field-effect transistors;    impurities;    Applied Mathematics;   

Others  :  https://uwspace.uwaterloo.ca/bitstream/10012/7804/1/Anicic_Rastko.pdf

瑞士|英语

来源: UWSPACE Waterloo Institutional Repository

【 摘 要 】

This thesis provides the study of graphene’s electrostatic interaction with the substrate surrounding it. Mathematical models based on current experimental configurations of graphene field-effect transistors (FET) are developed and analyzed. The conductivity and mobility of charge carriers in graphene are examined in the presence of impurities trapped in the substrate near graphene. Theimpurities encompass a wide range of possible structures and parameters, including different types of impurities, their distance from graphene, and the spatial correlation between them. Furthermore, we extend our models to analyze the influence of impurities on the fluctuations of the electrostaticpotential and the charge carrier density in the plane of graphene. The results of our mathematicalmodels are compared with current experimental results in the literature.