Conducted noise of GaN Schottky barrier diode in a DC–DC converter

IEICE Electronics Express

Tsuyoshi Funaki¹  Tetsuzo Ueda²  Shinji Ujita²  Takaaki Ibuchi¹  Masahiro Ishida² 

[1] Osaka University, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering;Panasonic Corporation, Green Autonomous Technology Development Center, Engineering Division, Automotive & Industrial Systems Company

关键词: gallium nitride Schottky barrier diode;    silicon carbide Schottky barrier diode;    reverse recovery;    DC–DC converter;    conducted noise;   

DOI  :  10.1587/elex.12.20150912

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) offer superior electrical performance over conventional silicon (Si) devices for high-voltage applications. Their fast switching operation and low switching losses help increase the efficiency of power conversion circuit. This study focuses on the switching characteristics of a GaN Schottky barrier diode (SBD) and investigates the conducted noise characteristics in a DC–DC boost converter by comparing a Si PiN diode and a SiC SBD.

【 授权许可】

Unknown