Loss and conducted noise characteristics for CCM PFC circuit with SiC-Schottky barrier diode

IEICE Electronics Express

Tsuyoshi Funaki¹  Takaaki Ibuchi¹ 

[1] Osaka University, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering

关键词: silicon carbide Schottky barrier diode;    reverse recovery behavior;    power factor correction circuit;    conducted noise spectrum;   

DOI  :  10.1587/elex.11.20140142

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)Cited-By(1)Active power-factor correction (PFC) circuits are commonly used in the first stage of single-phase AC/DC power converters to improve the power factor and low-order harmonic distortion. In continuous current mode (CCM) PFC circuits, the reverse recovery current of a PN diode is induced during its turn-off following the turn-on operation of a MOSFET, which causes not only a switching loss but also a switching noise in the PFC circuit. This study investigates the loss and conducted noise characteristics of a PFC circuit by comparing the difference among silicon PiN diodes, silicon Schottky barrier diodes (SBDs), and silicon carbide SBDs.

【 授权许可】

Unknown