New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics

Materials

Jin Wei¹  Meng Zhang²  Baikui Li² 

[1] Institute of Microelectronics, Peking University, Beijing 100871, China;Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;

关键词: power MOSFET;    deep trench;    p-islands;    beyond-1D-limit;    reverse recovery;   

DOI  :  10.3390/ma13112581

来源: DOAJ

【 摘 要 】

The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (R_SP) and breakdown voltage (BV). In this paper, a new power MOSFET architecture is proposed to achieve a beyond-1D-limit R_SP-BV trade-off. Numerical TCAD (technology computer-aided design) simulations were carried out to comparatively study the proposed MOSFET, the conventional power MOSFET, and the superjunction MOSFET. All the devices were designed with the same breakdown voltage of ~550 V. The proposed MOSFET features a deep trench between neighboring p-bodies and multiple p-islands located at the sidewall and bottom of the trench. The proposed MOSFET allows a high doping concentration in the drift region, which significantly reduces its R_SP compared to the conventional power MOSFET. The multiple p-islands split the electric field into multiple peaks and help the proposed MOSFET maintain a similar breakdown voltage to the conventional power MOSFET with the same drift region thickness. Another famous device technology, the superjunction MOSFET (SJ-MOSFET), also breaks the 1D-limit. However, the SJ-MOSFET suffers a snappy reverse recovery performance, which is a notorious drawback of SJ-MOSFET and limits the range of its application. On the contrary, the proposed MOSFET presents a superior reverse recovery performance and can be used in various power switching applications where hard commutation is required.

【 授权许可】

Unknown