ReRAM technology; challenges and prospects

IEICE Electronics Express

Hisashi Shima¹  Hiro Akinaga¹ 

[1] Innovation Center for Advanced Nanodevices (ICAN), National Institute of Advanced Industrial Science and Technology (AIST)

关键词: nonvolatile memories;    resistance switching;    functional oxides;    electrochemical devices;    redox reaction;   

DOI  :  10.1587/elex.9.795

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(33)Cited-By(11)We review recent progresses in Resistive Random Access Memory (ReRAM) technologies together with difficult challenges and prospects. ReRAM is one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, a brief historical overview of the research is provided. The technological overview is reported with the epoch-making achievements. Second, the current understanding in terms of the operation mechanism is shown followed by the technical assessment, especially the advantages of ReRAM. Finally, we summarize the challenges facing the ReRAM technology and the prospects.

【 授权许可】

Unknown