Effects of Zn doping concentration on resistive switching characteristics in Ag/La$_{1−x}Zn$_x$MnO$_3$/p$^+$-Si devices

Bulletin of materials science

SHUAISHUAI YAN¹  HUA WANG¹  DONG HAN¹  WEI QIU¹  LING YANG¹  QISONG CHEN¹  JIWEN XU¹ 

[1] School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China$$Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China$$School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of ChinaSchool of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China$$Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China$$Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of ChinaSchool of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China$$Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China$$

关键词: La$_{1−x}$Zn$_x$MnO$_3$;    amorphous;    resistance switching;    solâ€�?�gel.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^+$-Si devices with different Zn doping contents were fabricated through sol�?�gel method. The effects of Zn doping concentration on the microstructure of La$_{1−x}$Zn$_x$MnO$_3$ films, as well as on the resistance switching behaviour and endurance characteristics of Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si were investigated. After annealing at 600$^{circ}$C for 1~h, the La$_{1−x}$Zn$_x$MnO$_3$ ($x = 0.1$, 0.2, 0.3, 0.4, 0.5) are amorphous and have bipolar resistance characteristics, with RHRS/RLRS ratios $>$103. However, the endurance characteristics show considerable differences; $x = 0.3$ shows the best endurance characteristics in more than 1000 switching cycles. The conduction mechanism of the Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si is the Schottky emission mode at high resistance state. However, the conduction mechanism at low resistance state varies with Zn doping concentration. The dominant mechanism at $x = 0.1$ is filamentary conduction mechanism, whereas that at $x ge 0.2$ is space-charge-limited current conduction.

【 授权许可】

Unknown