A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

Sensors

Min-Cheng Chen³  Hao-Yu Chen³  Chia-Yi Lin³  Chao-Hsin Chien²  Tsung-Fan Hsieh¹  Jim-Tong Horng¹  Jian-Tai Qiu¹  Chien-Chao Huang³  Chia-Hua Ho³ 

[1] Graduate Institute of Biomedical Sciences, Chang Gung University, Taoyuan 333, Taiwan; E-Mails:;Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan; E-Mail:;National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu Science Park, Hsinchu 300, Taiwan; E-Mails:

关键词: nano-sensor fabrication;    nanowire FET;    nonvolatile memories;    semiconductive sensors;   

DOI  :  10.3390/s120403952

来源: mdpi

【 摘 要 】

This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically V_th-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady V_th adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.