Low-power fast (LPF) SRAM cell for write/read operation

IEICE Electronics Express

Ajay Kumar Singh¹  C. M. R. Prabhu¹ 

[1] Faculty of Engineering & Technology, Multimedia University

关键词: SRAM cell;    SNM;    power consumption;    threshold voltage and read stability;   

DOI  :  10.1587/elex.8.1473

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)Cited-By(3)Power consumption and Static noise margin (SNM) are most important parameters for memory design. The main source of power consumption in SRAM cell is due to large voltage swing on the bitlines during write operation. To reduce the power consumption and enhance the performance of the SRAM cell, we propose a Low-power fast (LPF) SRAM cell. The cell is simulated in terms of power, delay and read stability. The simulated result shows that the read and write power of the proposed cell is reduced up to 33% and 57.12% at 1.2V (in CMOS 0.12µm technology) respectively compared to the 6T cell. The read SNM of the LPF cell is 2x times of the conventional cell.

【 授权许可】

Unknown