High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

IEICE Electronics Express

Tsuyoshi Funaki²  Takashi Hikihara²  Tsunenobu Kimoto¹ 

[1] Kyoto University, Dept. of Electronic Science and Eng., Graduate school of Engineering;Kyoto University, Dept. of Electrical Eng.

关键词: temperature characteristics;    SiC;    Schottky barrier diode;    device structure;   

DOI  :  10.1587/elex.5.198

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)Cited-By(3)This paper experimentally studies the temperature dependencies of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450°C. Their I-V characteristics show that SBDs indeed function as rectifiers at extremely high temperatures, but forward conduction and reverse blocking performance significantly deteriorates when the temperature exceeds 200°C. C-V characteristics show diffusion potential reduction with temperature, and p-n junction characteristics were found for the junction barrier Schottky structure.

【 授权许可】

Unknown