Mono-layer C-face epitaxial graphene for high frequency electronics

SiC;RF;SOI;Epitaxial graphene;High frequency;Maximum oscillation frequency;Dielectric;Top gate;Transistor;Wafer bonding;Smart-cut;Nanoribbon

Guo, Zelei ; de Heer, Walter A. Physics Jiang, Zhigang Conrad, Edward H. First, Phillip N. Cressler, John D. ; de Heer, Walter A.

University:Georgia Institute of Technology

Department:Physics

关键词: SiC;    RF;    SOI;    Epitaxial graphene;    High frequency;    Maximum oscillation frequency;    Dielectric;    Top gate;    Transistor;    Wafer bonding;    Smart-cut;    Nanoribbon;   

Others  :  https://smartech.gatech.edu/bitstream/1853/52268/1/GUO-DISSERTATION-2014.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

As the thinnest material ever with high carrier mobility and saturationvelocity, graphene is considered as a candidate for future high speed electronics. Afterpioneering research on graphene-based electronics at Georgia Tech, epitaxial grapheneon SiC, along with other synthesized graphene, has been extensively investigated forpossible applications in high frequency analog circuits. With a combined effort fromacademic and industrial research institutions, the best cut-off frequency of grapheneradio-frequency (RF) transistors is already comparable to the best result of III-Vmaterial-based devices. However, the power gain performance of graphene transistorsremained low, and the absence of a band gap inhibits the possibility of graphene indigital electronics. Aiming at solving these problems, this thesis will demonstratethe effort toward better high frequency power gain performance based on mono-layerepitaxial graphene on C-face SiC. Besides, a graphene/Si integration scheme willbe proposed that utilizes the high speed potential of graphene electronics and logicfunctionality and maturity of Si-CMOS platform at the same time.