High voltage driver IC with improved immunity to di/dt induced substrate noise

IEICE Electronics Express

Yuxiang Feng¹  Zehong Li²  Bo Zhang²  Qing Hua²  Xi Qu² 

[1] Midea Air-conditioning & Refrigeration Research Institute, Guangdong Midea Refrigeration Equipment Co., Ltd.;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

关键词: driver IC;    di/dt;    substrate noise;    silicon-on-insulator (SOI);   

DOI  :  10.1587/elex.12.20150189

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Cited-By(1)This paper presents a high reliability high voltage driver integrated circuit (IC), which has been designed and fabricated for half bridge inverter drive of the intelligent power module (IPM). By utilizing the 1.0 µm 650 V high voltage bipolar CMOS DMOS (BCD) on silicon-on-insulator (SOI) process technology combined with modified level shift circuit, the proposed high voltage driver IC offers an improved immunity to di/dt induced substrate noise, with a negative voltage undershoot down to �?50 V which is about 1.5 times of the maximum allowable value of the conventional high voltage driver ICs at 100 °C, thus delivers higher reliability. Furthermore, this device also needs ultra-low quiescent supply currents and offers high driver capability (source 200 mA, sink 300 mA). In addition, this device can operate at a high temperature up to 175 °C and features higher breakdown voltage and lower leakage current than conventional high voltage driver ICs.

【 授权许可】

Unknown