Substrate noise coupling in NMOS transistor for RF/analog circuits

International Journal of Physical Sciences

Pawan Kumar Singh¹ 

关键词: Substrate modeling;    substrate noise;    coupling;    finite element method.;   

DOI  :  10.5897/IJPS11.419

学科分类：物理（综合）

来源: Academic Journals

【 摘 要 】

Substrate noise issues are important for the smooth integration of analog and digital circuitries on the same die. The substrate coupling mechanism with simulation and measurement in a 0.13 µm common source NMOS is demonstrated. The coupling mechanism is related with resistance of ground interconnects; also the importance of coupling mechanism is demonstrated. The results are showing the variation of resistance with distance between the contacts, the inductance and impedance for inductive and capacitive coupling.

【 授权许可】

CC BY