A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application

Proceedings

Yasutomi, Keita¹  Nam, Ho Hai²  Lee, Sanggwon³ 

[1] Author to whom correspondence should be addressed.;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018;Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan

关键词: CMOS image sensor (CIS);    time-of-flight (ToF);    silicon-on-insulator (SOI);    back-side-illuminator (BSI);   

DOI  :  10.3390/proceedings2130798

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m2@30 m.

【 授权许可】

CC BY