Experimental demonstration of a ferroelectric FET using paper substrate

IEICE Electronics Express

Seung-Hyun Kim³  Gwang-Geun Lee⁴  Byung-Eun Park⁶  Shun-Ichiro Ohmi⁴  Eisuke Tokumitsu⁴  Seung-Pil Han²  Changhwan Shin⁶  Dong-Joo Kim⁷  Wan-Gyu Lee⁵  Dae-Hee Han⁶  Hiroshi Ishiwara⁴  Yun Jeong Hwang⁸  Minseo Park¹ 

[1] Department of Physics, Auburn University;Department of Biomolecular Engineering, Tokyo Institute of Technology;School of Engineering, Brown University;Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology;Department of Nano CMOS, National NanoFab Center;School of Electrical and Computer Engineering, University of Seoul;Materials Research and Education Center, Auburn University;Clean Energy Research Center, Korea Institute of Science and Technology

关键词: ferroelectric transistor;    paper substrate;    P(VDF-TrFE);    P3HT;   

DOI  :  10.1587/elex.11.20140447

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)Cited-By(1)A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of �?20 V for the transistor on paper. An on/off current ratio of �?102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

【 授权许可】

Unknown