Nonvolatile organic field-effect transistors fabricated on Al foil substrates

IEICE Electronics Express

Min Gee Kim¹  Dae Hee Han¹  Soo Yong Kim¹  Byung-Eun Park¹ 

[1] School of Electrical and Computer Engineering, University of Seoul

关键词: ferroelectric;    nonvolatile transistor;    flexible;    P(VDF-TrFE);    P3HT;   

DOI  :  10.1587/elex.14.20170143

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

We fabricated metal-ferroelectric-metal capacitors and bottom-gate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.

【 授权许可】

CC BY