期刊论文详细信息
IEICE Electronics Express | |
Nonvolatile organic field-effect transistors fabricated on Al foil substrates | |
Min Gee Kim1  Dae Hee Han1  Soo Yong Kim1  Byung-Eun Park1  | |
[1] School of Electrical and Computer Engineering, University of Seoul | |
关键词: ferroelectric; nonvolatile transistor; flexible; P(VDF-TrFE); P3HT; | |
DOI : 10.1587/elex.14.20170143 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
We fabricated metal-ferroelectric-metal capacitors and bottom-gate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
RO201902191602547ZK.pdf | 1706KB | download |