Recent progress in 3D integration technology

IEICE Electronics Express

Mitsumasa Koyanagi¹ 

[1] New Industry Creation Hatchery Center, Tohoku University

关键词: 3D integration;    TSV;    heterogeneous integration;    3D DRAM;    3D image sensor;    3D microprocessor;   

DOI  :  10.1587/elex.12.20152001

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(52)Cited-By(4)3D integration technology is the key for future LSIs with high-performance, low-power and multi-functionality. Especially, to mitigate various concerns caused by device scaling down to 10 nm or less, it is indispensable to introduce a new concept of heterogeneous 3D integration in which various kinds of materials, devices and technologies are integrated on a Si substrate. Future prospects of such a heterogeneous 3D integration technology has been discussed representing typical examples of heterogeneous 3D LSIs after the present situation of 3D integration technology is described.

【 授权许可】

Unknown