IEICE Electronics Express | |
Recent progress in 3D integration technology | |
Mitsumasa Koyanagi1  | |
[1] New Industry Creation Hatchery Center, Tohoku University | |
关键词: 3D integration; TSV; heterogeneous integration; 3D DRAM; 3D image sensor; 3D microprocessor; | |
DOI : 10.1587/elex.12.20152001 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(52)Cited-By(4)3D integration technology is the key for future LSIs with high-performance, low-power and multi-functionality. Especially, to mitigate various concerns caused by device scaling down to 10 nm or less, it is indispensable to introduce a new concept of heterogeneous 3D integration in which various kinds of materials, devices and technologies are integrated on a Si substrate. Future prospects of such a heterogeneous 3D integration technology has been discussed representing typical examples of heterogeneous 3D LSIs after the present situation of 3D integration technology is described.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300435900ZK.pdf | 409KB | download |