Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

Nanomaterials

Hailong You¹  Yichang Wu¹  Dazheng Chen¹  Chunfu Zhang¹  Jiaqi Zhang¹  Jincheng Zhang¹  Guofang Yang¹  Yue Hao¹ 

[1] State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, China;

关键词: single-crystal silicon nano-films;    transfer printing;    heterogeneous integration;    sacrificial layer;    Si MOSFET;   

DOI  :  10.3390/nano11113085

来源: DOAJ

【 摘 要 】

As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, such that silicon nano-film devices are released from the donor substrate and can be transferred. However, in the process of wet etching the SiO₂ sacrificial layer present underneath the single-crystal silicon nano-film by using the transfer technology, the etching is often incomplete, which seriously affects the efficiency and quality of the transfer and makes the device preparation impossible. This article analyzes the principle of incomplete etching, and compares the four factors that affect the etching process, including the size of Si nano-film on top of the sacrificial layer, the location of the anchor point, the shape of Si nano-film on top of the sacrificial layer, and the thickness of the sacrificial layer. Finally, the etching conditions are obtained to avoid the phenomenon of incomplete etching of the sacrificial layer, so that the transfer technology can be better applied in the field of heterogeneous integration. Additionally, Si MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) on sapphire substrate were fabricated by using the optimized transfer technology.

【 授权许可】

Unknown