Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer

IEICE Electronics Express

Tsuyoshi Funaki¹  Shigeki Takahashi²  Youichi Ashida²  Satoshi Shiraki²  Atsuyuki Hiruma³ 

[1] Division of Electrical, Electric and Information Engineering Graduate School of Engineering, Osaka University;Semiconductor Process R&D Division, DENSO CORPORATION;Advanced Electric Technology R&D Department, DENSO CORPORATION

关键词: lateral diode;    SOI;    switching loss;    dynamic avalanche phenomenon;   

DOI  :  10.1587/elex.10.20130807

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)We have investigated the static and dynamic characteristics of high voltage lateral power diode (L-Diode) on silicon-on-insulator (SOI) substrate with planar / trenched buried oxide (Box) layer on the basis of device simulations. The conduction loss of the conventional L-Diode with planar Box layer is found to be reduced as a result of improving blocking capability by trenching the Box layer. In addition, the switching loss of the conventional L-Diode with planar Box layer, which stems from the second peak of the recovery current, is substantially reduced by adopting the trenched Box layer with suppression of the dynamic avalanche phenomenon.

【 授权许可】

Unknown