A novel controllable carrier-injection mechanism in high voltage diode for reducing switching loss

IEICE Electronics Express

Bo Ma²  Xiqiang Qiu²  Yu Cai¹  Tianqian Li²  Changjiang Chen²  Xiaoming Yang² 

[1] Chengdu Textile College;School of Electrical and Information, Research Center for Advanced Computation, Xihua University

关键词: diode;    high voltage;    hole-injection effect;    switching loss;   

DOI  :  10.1587/elex.11.20140461

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)A controllable injection diode (CID) is proposed for reducing switching loss and a novel controllable carrier-injection mechanism (CCIM) is investigated in the new device. The CCIM reveals that due to the limit carrier lifetime, the carrier-injection can be controlled in one narrow-pulse time. Based on the CCIM, the CID takes advantage of a PiN diode and a junction field-effect transistor (JFET) for modulating the forward voltage drop. The simulation results show that the forward voltage drop can be modulated to 0.54 V at minimum by the carrier-injection enhancement at 45 A/cm2. On the other hand, the JFET weakens carrier-storage effect in the i-layer and the reverse recovery time of the CID is about 0.27 µs at rectifying 50 kHz, which is sufficiently faster than 1.1 µs of the conventional diode. Therefore, the switch loss of the CID can be decreased in a DC-DC buck converter.

【 授权许可】

Unknown