Characterization of SiC power module for high switching frequency operation

IEICE Electronics Express

Tsuyoshi Funaki¹  Masashi Sasagawa²  Hiroyasu Inoue¹  Takashi Nakamura² 

[1] Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering;Rohm Co. Ltd.

关键词: SiC device;    power module;    high frequency switching;    terminal capacitance;    switching loss;   

DOI  :  10.1587/elex.7.1008

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)The authors developed SiC power module with large rated current by connecting multiple SiC MOSFETs in parallel. This paper characterizes and evaluates its high switching frequency operation performance by comparing it with the conventional Si IGBT module. First, the static current-voltage characteristics and terminal capacitance-voltage characteristics are evaluated. Then, the switching behavior of the SiC power module is experimentally evaluated in the DC-DC boost converter circuit. The results clarified the superiority of the developed SiC power module for fast switching capability and low switching loss.

【 授权许可】

Unknown