High Current Density in uc-Si PECVD Diodes for Low Temperature

Beck, Patricia A. ; Nickel, Janice H. ; Hartwell, Peter G.

HP Development Company

关键词: diode;    PECVD;    µc-Si;   

RP-ID  :  HPL-2004-63

学科分类：计算机科学（综合）

美国|英语

来源: HP Labs

【 摘 要 】

The development of microcrystalline diodes grown at low temperature by PECVD techniques is reported. Current densities near 200 A/cm2 at + 2 V, and rectification ratios are on the order of 105 at +/-1V and 107 at +/- 2V were obtained. The reverse currents were in the nano-ampere range. Correlations between deposition conditions and film quality are presented. The effects of mesa formation and subsequent treatments designed to reduce process damage are discussed: annealing conditions yield an increase in forward current, concurrent with a decrease in reverse current. Fabrication conditions are compatible with applications requiring low temperature processes (e. g., multi-layer structures, molecular layers, or plastic substrates and coatings). Notes: Copyright Materials Research Society. To be published in the MRS Spring Proceedings, 2004, San Francisco, CA 6 Pages