Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide

Buried Oxide;Strained Silicon;SOI

Suri, Rahul ; Dr. Veena Misra, Committee Chair,Dr. Jon-Paul Maria, Committee Member,Dr. Carlton Osburn, Committee Member,Suri, Rahul ; Dr. Veena Misra ; Committee Chair ; Dr. Jon-Paul Maria ; Committee Member ; Dr. Carlton Osburn ; Committee Member

University:North Carolina State University

关键词: Buried Oxide;    Strained Silicon;    SOI;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/1705/etd.pdf?sequence=1&isAllowed=y

美国|英语

来源: null

【 摘 要 】

The Integrated Circuit industry is driven by the continuously shrinking feature size of devices. The era of planar bulk MOS transistor, however, is nearing its end. The performance of bulk MOS transistor is severely degraded by short channel effects in the sub-65nm regime. In such a scenario, the Silicon-on-Insulator (SOI) technology looks set to become the next driver of CMOS scaling. SOI has been proved capable of providing increased transistor speed, reduced power consumption and enhanced device scalability as demanded by the 65nm and beyond technology generations. The problems facing SOI include fabrication of thin silicon and buried oxide (BOX) films and high manufacturing cost.This thesis focuses on a novel approach to building a SOI substrate which uses an epitaxial oxide as template to grow silicon on top. The novel "Floating Epitaxy SOI" aims to guarantee thin silicon films and low manufacturing cost. This research work involves modeling ultra-thin body fully depleted SOI devices from 60nm gate length down to 10nm gate length. The device uses metal⁄high-k gatestack and strained silicon as attractive features for better device performance. The goal of this work is to re-engineer the device structure and alter device design parameters at every gate length such that device performance meets the semiconductor roadmap projections in terms of off-state leakage current and ratio of drive current to leakage current as specified by International Technology Roadmap for Semiconductors. (ITRS) A challenge to better device performance is the high permittivity of candidate epitaxial oxides. It is well established that high permittivity buried oxide layer adds additional short channel effects. This makes device design and control of short channel effects more difficult. The major findings of this thesis are that ultra-thin body SOI devices based on "Floating Epitaxy SOI" meet ITRS projections down to 10nm gate length. Moreover, for sub-15nm devices that require ultra-thin BOX, high permittivity of BOX doesn't hurt device performance but improves it slightly.