期刊论文详细信息
IEICE Electronics Express
A CMOS 4.6ppm/°C curvature-compensated bandgap voltage reference
Zhangming Zhu1  Huaxi Gu2  Minjie Liu1  Lianxi Liu1  Shubin Liu1  Yintang Yang1 
[1] School of Microelectronics, Xidian University;School of Telecommunications Engineering, Xidian University
关键词: CMOS;    voltage reference;    subthreshold;    high-order curvature -compensation;    high PSRR;    self-cascode transistor;   
DOI  :  10.1587/elex.9.1617
学科分类:电子、光学、磁材料
来源: Denshi Jouhou Tsuushin Gakkai
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【 摘 要 】

References(6)Cited-By(1)A novel high precision high order curvature-compensated bandgap reference (BGR) is presented in this paper designed using the subthreshold current of self-cascode transistors in standard digital 0.18µm CMOS process. Simultaneously its temperature coefficient is typically 4.6ppm/°C in the temperature range of -25 to 120°C with a supply current of 17.25µA. A power supply rejection ratio (PSRR) of -51dB is achieved while the layout area is no more than 0.0022mm2.

【 授权许可】

Unknown   

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