期刊论文详细信息
IEICE Electronics Express | |
A CMOS 4.6ppm/°C curvature-compensated bandgap voltage reference | |
Zhangming Zhu1  Huaxi Gu2  Minjie Liu1  Lianxi Liu1  Shubin Liu1  Yintang Yang1  | |
[1] School of Microelectronics, Xidian University;School of Telecommunications Engineering, Xidian University | |
关键词: CMOS; voltage reference; subthreshold; high-order curvature -compensation; high PSRR; self-cascode transistor; | |
DOI : 10.1587/elex.9.1617 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(6)Cited-By(1)A novel high precision high order curvature-compensated bandgap reference (BGR) is presented in this paper designed using the subthreshold current of self-cascode transistors in standard digital 0.18µm CMOS process. Simultaneously its temperature coefficient is typically 4.6ppm/°C in the temperature range of -25 to 120°C with a supply current of 17.25µA. A power supply rejection ratio (PSRR) of -51dB is achieved while the layout area is no more than 0.0022mm2.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300359305ZK.pdf | 449KB | download |