A 128 Kb HfO2 ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement

IEICE Electronics Express

Haihua Shen²  Feng Zhang¹  Chengying Chen¹  Hongbin Sun³ 

[1] Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences;School of Computer and Control Engineering, University of Chinese Academy of Sciences;School of Electrical and Information Engineering, Xi’an Jiaotong University

关键词: ReRAM;    Double-Reference;    Dynamic-Tracking;    Dynamic read;   

DOI  :  10.1587/elex.13.20160061

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(18)A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13 µm 1P8M CMOS process. ReRAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.

【 授权许可】

Unknown