期刊论文详细信息
IEICE Electronics Express | |
A 128 Kb HfO2 ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement | |
Haihua Shen2  Feng Zhang1  Chengying Chen1  Hongbin Sun3  | |
[1] Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences;School of Computer and Control Engineering, University of Chinese Academy of Sciences;School of Electrical and Information Engineering, Xi’an Jiaotong University | |
关键词: ReRAM; Double-Reference; Dynamic-Tracking; Dynamic read; | |
DOI : 10.1587/elex.13.20160061 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(18)A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13 µm 1P8M CMOS process. ReRAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300336434ZK.pdf | 1826KB | download |