Flexible Nonvolatile Resistive Memory Devices Using Self-assembled Block Copolymer/PCBM Nanocomposites

ReRAM;Flexible memory;Block copolymer;PCBM;Nonvolatile memory

융합과학기술대학원 나노융합학과 ;

University:서울대학교 대학원

关键词: ReRAM;    Flexible memory;    Block copolymer;    PCBM;    Nonvolatile memory;   

Others  :  http://s-space.snu.ac.kr/bitstream/10371/133299/1/000000004197.pdf

美国|英语

来源: Seoul National University Open Repository

【 摘 要 】

Here, the nonvolatile resistive organic memory devices based on a fullerene derivatives (PCBM) embedded in a micro-phase separated poly(styrene-b-methyl methacrylate) (PS-b-PMMA) block copolymer thin film were demonstrated. PS-b-PMMA diblock copolymer used in this study tends to be self-assembled into the spherical structure inside the films according to the block copolymer properties. PCBM molecules were selectively isolated in the PS nanosphere domain which resulted in well-dispersed condition of PCBM without aggregation. Controlling the aggregation of PCBM allowed the memory devices to possess the improved performance. The PS-b-PMMA:PCBM nanocomposite based memory devices exhibited bipolar switching phenomenon and their characteristics were continuously stable and reproducible at low operating voltages. These results make distinctions with the homopolymer:PCBM composite devices which have unstable set/reset processes and short retention time. As further application, we fabricated the flexible memory devices using PS-b-PMMA/PCBM nanostructure in which no significant degradation of electrical properties was observed before and after bending. By simple solution process, nonvolatile resistive memory devices which had high performance and low power consumption were successfully achieved without any additional process.