A self-adaptive write driver with fast termination of step-up pulse for ReRAM

IEICE Electronics Express

QinTian Zou²  Fan Ye¹  Xiaoyong Xue¹  Yinyin Lin¹  Jianguo Yang¹  JinGang Wu²  Ryan Huang²  Juan Xu¹ 

[1] ASIC and System State Key Lab, Fudan University;SOC Technology Development Center, Semiconductor Manufacturing International Corp.

关键词: ReRAM;    programming;    write;    circuit design;   

DOI  :  10.1587/elex.13.20160195

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)Resistive random access memory (ReRAM) has been considered as a promising non-volatile storage technology of next generation especially for embedded application. However, for conventional write scheme with fixed duration and amplitude, power consumption is very high and cell performance degrades due to over-programming. In this paper, we proposed a self-adaptive write driver with fast termination of ramped-up pulse (FT-RPSWD) after write success. The slope detection and feedback mechanism are used to monitor the switching point of cell resistance. The scheme is insensitive to the selection of reference voltage, which is beneficial to ensure write margin even if the resistance variation among cells is severe. The proposed technique is verified on a 256 Kb ReRAM test macro fabricated based on 0.13-µm logic process. The mean value of endurance distribution is improved by 3 orders of magnitude from 102 to 105 and the set and reset energy per bit are reduced significantly.

【 授权许可】

Unknown