Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage

IEICE Electronics Express

Tsuyoshi Funaki²  Shuntaro Matsuzaki²  Takashi Hikihara²  Tsunenobu Kimoto¹ 

[1] Kyoto University, Dept. of Electronic Science and Eng. Graduate school of Engineering;Kyoto University, Dept. of Electrical Eng.

关键词: C-V characteristics;    high voltage;    SiC;    punch-through;    parameter extraction;   

DOI  :  10.1587/elex.3.379

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)Cited-By(4)This paper investigates the punch-through phenomenon in SiC Schottky Barrier Diodes (SBD) from capacitance-voltage (C-V) characteristics at high reverse bias voltage. High voltage bias application has not been possible by conventional measurement instrumentation. The authors, therefore, develop C-V characteristics measurement instrumentation which enables the application of high dc bias voltages on SiC-SBD up to the rated reverse blocking voltage. The measurement is then validated through the comparison of results from different measurement methods. The proposed methods clearly reveal the punch-through phenomenon of measured SiC-SBD, and enable the extraction of pertinent parameters for device modeling.

【 授权许可】

Unknown