Drain current response delay of FD-SOI MOSFETs in RF operation

IEICE Electronics Express

Yoshiyuki Shimizu¹  Kenji Taniguchi¹  Bunsei Murakami¹  Sungwoo Cha¹  Toshimasa Matsuoka¹  Yoshihiro Utsurogi¹  Gue Chol Kim¹  Keisuke Ueda¹ 

[1] Graduate School of Engineering, Osaka University

关键词: FD-SOI;    MOSFET;    RF;    modeling;    drain current response delay;   

DOI  :  10.1587/elex.1.518

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)Cited-By(1)We investigated the frequency dependences of Y22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.

【 授权许可】

Unknown