Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

IEEE Journal of the Electron Devices Society

F. Arnaud¹  J. Camirand Lemyre²  D. Drouin²  P. Galy³  Michel Pioro-Ladriere⁴  P. Lemieux⁴ 

[1] de Sherbrooke, Sherbrooke, QC, Canada;Institut Quantique, D&x00E9;Technology and Design Platforms Research and Development Center, STMicroelectronics, Crolles, France;partement de physique, Universit&x00E9;

关键词: FD-SOI;    quantum computing;    co-integration;    cryogenic temperature;   

DOI  :  10.1109/JEDS.2018.2828465

来源: DOAJ

【 摘 要 】

Silicon co-integration offers compelling scale-up opportunities for quantum computing. In this framework, cryogenic temperature is required for the coherence of solid-state quantum devices. This paper reports the characterization of an nMOS quantum-dot dedicated structure below 100 mK. The device under test is built in thin silicon film fabricated with 28 nm high-k metal gate ultra-thin body and ultra-thin buried oxide advanced CMOS technology. The MOS structure is functional with improved performances at cryogenic temperature. The results open new research avenues in CMOS co-integration for quantum computing applications within the FD-SOI platform.

【 授权许可】

Unknown