Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

IEICE Electronics Express

Masahiro Asada¹  Safumi Suzuki¹  Hidetoshi Kanaya¹ 

[1] Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

关键词: terahertz oscillators;    resonant tunneling diode;    slot antenna;    terahertz integrated circuits;    electron dwell time;    quantum well;   

DOI  :  10.1587/elex.10.20130501

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(23)Cited-By(4)Terahertz oscillators using AlAs/InGaAs resonant tunneling diodes with deep and thin quantum wells are reported. Although a thin well has been shown to be effective for high-frequency oscillation until now due to a reduced electron dwell time, it caused an increase in bias voltage. We introduce a deep well with indium-rich InGaAs to maintain or even to reduce the bias voltage. Current-voltage and oscillation characteristics are compared between the quantum wells with 3.5-nm-thick In0.8Ga0.2As and 3-nm-thick In0.9Ga0.1As. The highest oscillation frequency was 0.96THz for the former while 1.27THz for the latter without increase in bias voltage.

【 授权许可】

Unknown