IEICE Electronics Express | |
Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells | |
Masahiro Asada1  Safumi Suzuki1  Hidetoshi Kanaya1  | |
[1] Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology | |
关键词: terahertz oscillators; resonant tunneling diode; slot antenna; terahertz integrated circuits; electron dwell time; quantum well; | |
DOI : 10.1587/elex.10.20130501 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(23)Cited-By(4)Terahertz oscillators using AlAs/InGaAs resonant tunneling diodes with deep and thin quantum wells are reported. Although a thin well has been shown to be effective for high-frequency oscillation until now due to a reduced electron dwell time, it caused an increase in bias voltage. We introduce a deep well with indium-rich InGaAs to maintain or even to reduce the bias voltage. Current-voltage and oscillation characteristics are compared between the quantum wells with 3.5-nm-thick In0.8Ga0.2As and 3-nm-thick In0.9Ga0.1As. The highest oscillation frequency was 0.96THz for the former while 1.27THz for the latter without increase in bias voltage.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300044981ZK.pdf | 1660KB | download |