Direct intensity modulation of resonant-tunneling-diode terahertz oscillator up to �?30 GHz

IEICE Electronics Express

Seiichirou Kitagawa¹  Kengo Okada¹  Masahiro Asada¹  Safumi Suzuki²  Yu Ikeda¹ 

[1] Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology;Graduate School of Science and Engineering, Tokyo Institute of Technology

关键词: terahertz oscillators;    terahertz communications;    resonant tunneling diode;    high-frequency direct modulation;   

DOI  :  10.1587/elex.12.20141161

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(16)Cited-By(4)We proposed and fabricated resonant-tunneling-diode (RTD) terahertz (THz) oscillators with a structure for high-frequency direct modulation, which is useful for high-capacity THz wireless communications. The oscillator is composed of RTD and slot antenna. To obtain high cut-off frequency of direct modulation, the capacitance of the metal-insulator-metal (MIM) layer forming the slot antenna was reduced without decrease in THz output power which was a problem in the previous structure. A cut-off frequency of 30 GHz was obtained in direct intensity modulation of the device oscillating at 350 GHz with the reduced MIM capacitance of 0.7 pF.

【 授权许可】

Unknown