Terahertz oscillators using electron devices — an approach with Resonant tunneling diodes

IEICE Electronics Express

Masahiro Asada¹  Safumi Suzuki¹ 

[1] Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

关键词: terahertz oscillator;    electron devices;    resonant tunneling diode;   

DOI  :  10.1587/elex.8.1110

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(63)Cited-By(9)Resonant tunneling diodes (RTDs) have the potential for compact and coherent terahertz (THz) sources operating at room temperature. In this paper, recent results of THz oscillators with RTDs are described. A fundamental oscillation frequency up to 831GHz was achieved with RTD having high available current density and low capacitance. By the structure reducing the transit time, the frequency further increased to 1.04THz. This is the first achievement of a fundamental oscillation above 1THz in room-temperature electronic single oscillators. The output power of 400µW at 550GHz was obtained in a single oscillator by the offset-fed slot antenna. Coherent power combining with multi-element array was observed. The spectral linewidth, frequency change with bias voltage, and direct modulation were also described.

【 授权许可】

Unknown