The impact of trapping centers on AlGaN/GaN resonant tunneling diode

IEICE Electronics Express

Zhangming Zhu¹  Jun Luo¹  Xiaoxian Liu¹  Haoran Chen¹  Lin’an Yang¹  Yue Hao¹ 

[1] School of Microelectronics, Xidian University

关键词: GaN;    resonant tunneling diode;    trapping center;    quantum well;   

DOI  :  10.1587/elex.10.20130588

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)We report on a simulation for aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level trapping centers into the polarized AlGaN/GaN/AlGaN quantum well. Theoretical analysis reveals that the degradations of NDR characteristics in GaN based RTDs are actually caused by the combined actions of the activation energy and the trap density. Furthermore, the trapping centers with high activation energy play a dominant role in the degradation of negative differential resistance (NDR) characteristics.

【 授权许可】

Unknown