The Journal of Engineering | |
Natural-air-cooled 5 kVA single-phase GaN inverter with paralleled multilayer PCB magnetics | |
Hüseyin MeÅe1  | |
[1] Electrical and Electronics Engineering , Hacettepe University , Beytepe Campus , Ankara , Turkey | |
关键词: output filter; GaN; single-phase full-bridge inverter; enhancement-mode transistor technology; Si; paralleled multilayer PCB magnetics; multilayer high-current printed-circuit board magnetics; inverter modulation index; natural-air-cooled single-phase inverter; frequency 50 kHz; efficiency 98 percent; metal-oxide-semiconductor field-effect transistor; apparent power 5 kVA; wide b; gap power semiconductor; e-mode transistor technology; switching frequency pair selection; | |
DOI : 10.1049/joe.2017.0355 | |
学科分类:工程和技术(综合) | |
来源: IET | |
【 摘 要 】
In this study, a systematic approach to the design and development of a high-efficiency, natural-air-cooled, single-phase inverter with a multilayer high-current printed-circuit board (PCB) magnetics is presented. The size and efficiency of inverters implemented with the silicon transistor technology have almost reached a certain limit. The use of wide bandgap power semiconductors, such as the silicon carbide metalâoxideâsemiconductor field-effect transistor and the gallium nitride (GaN) enhancement-mode (e-mode) transistor not only pushes further the efficiency limits, but also shrinks the inverter size. A new approach is proposed here in order to obtain a high-efficiency inverter which relies basically upon the derivation of analytical expressions for the inverter losses as a function of the inverter modulation index, for the optimum transistor and highest switching frequency pair selection, and the design of the output filter based on a paralleled, multilayer PCB magnetics. In the developed 5 kVA single-phase full-bridge inverter, GaN e-mode transistors are used to minimise the inverter losses and to decrease the cooling requirement, and size of the system. The proposed systematic design approach has been verified on the implemented 5 kVA, 50 kHz, naturally-cooled GaN inverter, with a power density of 2.7 W/cm3 (44.3 W/inch3), and a full-load efficiency of 98%.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO201910254666962ZK.pdf | 1185KB | download |