Area-Selective Growth of Aligned ZnO Nanorod Arrays for MEMS Device Applications

Proceedings

Strempel, Klass¹  Zhou, Hao²  Xu, Jiushuai³ 

[1] Author to whom correspondence should be addressed.;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018;TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany

关键词: area-selective growth;    ZnO nanorods;    MEMS;    DC sputtering/annealing;   

DOI  :  10.3390/proceedings2130887

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

ZnO nanorods (NRs) arrays with good vertical alignment were selectively grown on microscale patterned surfaces by a MEMS-compatible, low-temperature chemical-bath deposition method (CBD). The direct-current (DC) sputtered and subsequently annealed ZnO seed-layer was found to have a crucial effect on the ZnO NRs growth. Depending on the pre-annealing temperature between 200 °C and 700 °C, which is compatible with our microcantilever fabrication process, diameters and area densities of the NRs of 60–99 nm and 17–27 µm−2 were observed, respectively, with the best alignment at 600 °C. A surface-area enlargement factor of 48 was achieved with respect to a ZnO layer indicating the potential of ZnO NRs arrays for MEMS applications, such as gas sensing.

【 授权许可】

CC BY