Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots

Nanoscale Research Letters

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[1] 0000 0000 9291 3229, grid.162110.5, School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, 430070, Wuhan, Hubei, China;

关键词: Graphene quantum dots;    Top-down;    Doping ratios;    The specific capacitance;   

DOI  :  10.1186/s11671-019-3045-4

来源: publisher

【 摘 要 】

Sulfur, nitrogen co-doped graphene quantum dots (S, N-GQDs) with high crystallinity were obtained by a top-down strategy. The as-prepared S, N-GQDs were investigated and the results indicate that S, N-GQDs exhibit a transverse dimension about 20 nm and a topographic height of 1–2 layers graphene. The incorporation of S, N can effectively reduce the layers of GQDs and strip the graphene sheets. Moreover, the S, N-GQDs reveal an absorption band located at 405 nm and exhibit an adjustable fluorescence characteristic in the excitation-visible range. Meanwhile, the S, N-GQDs shows a high specific capacitance of 362.60 F g−1 at a fixed scan rate of 5 mV s −1. This high performance is ascribed to the additional high pseudocapacitance provided by the doped S, N and the doping state acting as a trap state to enhance the charge storage capacity. The high specific capacitance advantages of S, N-GQDs illustrate their potential prospects in the capacitors.

【 授权许可】

CC BY