Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

Bulletin of the Polish Academy of Sciences. Technical Sciences

A. RogalskiInstitute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  P. MartyniukCorresponding authorInstitute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, PolandEmailOther articles by this author:De Gruyter OnlineGoogle Scholar¹ 

[1] Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

关键词: Keywords : barrier detectors;    unipolar barrier;    nBn;    HgCdTe;    photodetectors;   

DOI  :  10.2478/bpasts-2013-0020

学科分类：工程和技术（综合）

来源: Polska Akademia Nauk * Centrum Upowszechniania Nauki / Polish Academy of Sciences, Center for the Advancement of Science

【 摘 要 】

The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 μm The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated.

【 授权许可】

Unknown