Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Lyapunov, D.V.^1 ; Pishchagin, A.A.^1 ; Grigoryev, D.V.^1 ; Korotaev, A.G.^1 ; Voitsekhovskii, A.V.^1 ; Kokhanenko, A.P.^1 ; Iznin, I.I.^1,2 ; Savytskyy, H.V.^3 ; Bonchik, A.U.^3 ; Dvoretskii, S.A.^1,4 ; Mikhailov, N.N.^4

Tomsk State University, 36 Lenin Av., Tomsk

634050, Russia^1

Scientific Research Company Caratt, L'viv, Ukraine^2

Institute for Applied Problems in Mechanics and Mathematics, L'viv, Ukraine^3

Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia^4

关键词: Boron implantation;    Damage accumulation;    Electrically actives;    Hg1-xCdxTe;    HgCdTe;    Implantation profiles;    Ion energies;    Material compositions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012097/pdf
DOI  :  10.1088/1742-6596/741/1/012097

来源: IOP

【 摘 要 】

In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012-1015ions/cm2and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films.